Tuning of the critical feedback level in 1.55-μm quantum dash semiconductor laser diodes
Tuning of the critical feedback level in 1.55-μm quantum dash semiconductor laser diodes
- Author(s): F. Grillot ; N.A. Naderi ; M. Pochet ; C.-Y. Lin ; P. Besnard ; L.F. Lester
- DOI: 10.1049/iet-opt.2009.0037
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- Author(s): F. Grillot 1, 2 ; N.A. Naderi 1 ; M. Pochet 1 ; C.-Y. Lin 1 ; P. Besnard 2 ; L.F. Lester 1
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View affiliations
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Affiliations:
1: Center for High Technology Materials, Albuquerque, USA
2: CNRS FOTON-ENSSAT, Lannion Cedex, France
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Affiliations:
1: Center for High Technology Materials, Albuquerque, USA
- Source:
Volume 3, Issue 6,
December 2009,
p.
242 – 247
DOI: 10.1049/iet-opt.2009.0037 , Print ISSN 1751-8768, Online ISSN 1751-8776
The onset of the coherence collapse (CC) regime, which is incompatible with data transmission, is investigated both theoretically and experimentally in a 1.55-µm InAs/InP quantum dash semiconductor laser. It is numerically shown that the filling from the excited state produces an additional term, which accelerates the route to chaos. This contribution can be seen as a perturbation that reduces the overall CC threshold.
Inspec keywords: excited states; quantum dash lasers; laser feedback; III-V semiconductors; indium compounds; optical chaos; laser tuning; light coherence
Other keywords:
Subjects: Laser beam modulation, pulsing and switching; mode locking and tuning; Nonlinear optics and devices; Optical chaos and related effects; Semiconductor lasers; Laser beam modulation, pulsing and switching; mode locking and tuning; Lasing action in semiconductors; Design of specific laser systems
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