RT Journal Article
A1 Bratin Ghosh
AD Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, West Bengal, India, 721 302
A1 Anandrao B. Kakade
AD Department of Electronics and Telecommunication Engineering, Rajarambapu Institute of Technology, Sakharale, Islampur - 415414, India

PB iet
T1 Mode excitation in the microstrip slot-coupled three-layer hemispherical dielectric resonator antenna
JN IET Microwaves, Antennas & Propagation
VO 10
IS 14
SP 1534
OP 1540
AB In this study, a microstrip slot-coupled multilayer dielectric resonator antenna (DRA) structure is rigorously analysed from the modal perspective, taking into account all layers. The choice of layer permittivities of the multilayer structure to reduce the Q-factor and obtain optimum bandwidth performance of the antenna is outlined. Next, the mechanism of bandwidth enhancement for the centred and offset slots is examined taking into account the excited modes in the structure. It is found that while the centred slot couples to one DRA mode, an offset slot can couple to multiple DRA modes together with the slot mode. Thereafter, the excitation efficiency of modes in the multilayer DRA structure is highlighted to thoroughly characterise the modal contribution in the coupling behaviour for the centred and offset-slots.
K1 modal contribution
K1 centred slot couples
K1 layer permittivities
K1 Q-factor reduction
K1 mode excitation
K1 microstrip slot-coupled multilayer dielectric resonator antenna structure
K1 excitation efficiency
K1 bandwidth enhancement mechanism
K1 microstrip slot-coupled three-layer hemispherical dielectric resonator antenna
K1 offset slot
K1 multilayer DRA structure
K1 coupling behaviour
DO https://doi.org/10.1049/iet-map.2015.0727
UL https://digital-library.theiet.org/;jsessionid=1gkbylf1n2sfx.x-iet-live-01content/journals/10.1049/iet-map.2015.0727
LA English
SN 1751-8725
YR 2016
OL EN