Passive varactor tuned equivalent transmission line phase shifter at C-band in 0.25 µm BiCMOS

F. Ellinger; J. Wagner; U. Mayer; R. Eickhoff

Passive varactor tuned equivalent transmission line phase shifter at C-band in 0.25 µm BiCMOS

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Passive varactor tuned equivalent transmission line phase shifter at C-band in 0.25 µm BiCMOS

Author(s): F. Ellinger ; J. Wagner ; U. Mayer ; R. Eickhoff
DOI: 10.1049/iet-cds:20070350

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Author(s): F. Ellinger ¹ ; J. Wagner ¹ ; U. Mayer ¹ ; R. Eickhoff ¹
- Affiliations: 1: Chair for Circuit Design and Network Theory, Dresden University of Technology, Dresden, Germany
Source: Volume 2, Issue 4, August 2008, p. 355 – 360
DOI: 10.1049/iet-cds:20070350 , Print ISSN 1751-858X, Online ISSN 1751-8598

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The design of a C-band phase shifter fabricated in a commercial 0.25 µm BiCMOS technology is presented. Phase shift is enabled by tuning the varactors of a lumped element, equivalent of a transmission line. Only one single control voltage is required. The circuit is optimised for adaptive antenna combining on the basis of the 802.11a standard and matched for 50 Ω terminations. Within a frequency band ranging from 5.2 to 5.8 GHz, the circuit yields a phase control range of higher than 195°, an insertion loss of only 3.6±1.5 dB, return losses higher than 12 dB and a 1 dB compression point above 10 dBm. The chip and circuit areas amount to 0.6 and 0.25 mm², respectively. To the knowledge of the authors, at comparable phase control range, the lowest insertion loss for a passive phase shifter integrated in silicon reported to date is demonstrated.

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Passive varactor tuned equivalent transmission line phase shifter at C-band in 0.25 µm BiCMOS

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