Accurate model for single-photon avalanche diodes
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- Author(s): R. Mita 1 ; G. Palumbo 1 ; P.G. Fallica 2
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Affiliations:
1:
Dipartimento di Ingegneria Elettrica, Elettronica e dei Sistemi,
University of Catania
, Catania
, Italy
2: ST Microelectronics , Catania , Italy
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Affiliations:
1:
Dipartimento di Ingegneria Elettrica, Elettronica e dei Sistemi,
University of Catania
, Catania
, Italy
- Source: IET Circuits, Devices & Systems, Volume 2, Issue 2, April 2008, p. 207 – 212, DOI: 10.1049/iet-cds:20070180, Print ISSN 1751-858X, Online ISSN 1751-8598
Abstract
An accurate model useful for simulating single-photon avalanche diodes including biasing circuits is presented. The authors developed the model using Verilog-A codes to describe both static and dynamic behaviours. The derived model fits experimental results extracted from practical devices better than the one used in the open literature. SPECTRE simulations confirmed the validity of the proposed model, which avoids convergence problems and also shows a higher accuracy than traditional models.
Inspec keywords: semiconductor device models; avalanche photodiodes
Other keywords: biasing circuits; SPECTRE simulations; Verilog-A codes; convergence problems; single-photon avalanche diodes; SPAD devices
Subjects: Photoelectric devices; Semiconductor device modelling, equivalent circuits, design and testing; Junction and barrier diodes
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