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Idealised operation of zero-voltage-switching series-L/parallel-tuned Class-E power amplifier

Idealised operation of zero-voltage-switching series-L/parallel-tuned Class-E power amplifier

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An analysis of a modified series-L/parallel-tuned Class-E power amplifier is presented, which includes the effects that a shunt capacitance placed across the switching device will have on Class-E behaviour. In the original series L/parallel-tuned topology in which the output transistor capacitance is not inherently included in the circuit, zero-current switching (ZCS) and zero-current derivative switching (ZCDS) conditions should be applied to obtain optimum Class-E operation. On the other hand, when the output transistor capacitance is incorporated in the circuit, i.e. in the modified series-L/parallel-tuned topology, the ZCS and ZCDS would not give optimum operation and therefore zero-voltage-switching (ZVS) and zero-voltage-derivative switching (ZVDS) conditions should be applied instead. In the modified series-L/parallel-tuned Class-E configuration, the output-device inductance and the output-device output capacitance, both of which can significantly affect the amplifier's performance at microwave frequencies, furnish part, if not all, of the series inductance L and the shunt capacitance COUT, respectively. Further, when compared with the classic shunt-C/series-tuned topology, the proposed Class-E configuration offers some advantages in terms of 44% higher maximum operating frequency (fMAX) and 4% higher power‐output capability (PMAX). As in the classic topology, the fMAX of the proposed amplifier circuit is reached when the output-device output capacitance furnishes all of the capacitance COUT, for a given combination of frequency, output power and DC supply voltage. It is also shown that numerical simulations agree well with theoretical predictions.

References

    1. 1)
    2. 2)
      • Choi, D.K.: `High efficiency switched-mode power amplifiers for wireless communications', March 2001, PhD, University of California, Santa Barbara.
    3. 3)
    4. 4)
    5. 5)
      • M. Iwadare , S. Mori , K. Ikeda . Even harmonic resonant class E tuned power amplifier without RF choke. Electron. Commun. Japan , 1 , 23 - 30
    6. 6)
      • Choi, D.K., Long, S.I.: `Finite DC feed inductor in class E power amplifiers–a simplified approach', IEEE MTT-S Int. Microwave Symp. Dig., 2002, p. 1643–1646.
    7. 7)
    8. 8)
      • S.C. Cripps . (1999) RF power amplifiers for wireless communications.
    9. 9)
    10. 10)
    11. 11)
    12. 12)
      • A.V. Grebennikov . Load network design technique for switched-mode tuned class E power amplifiers. High Frequency Electron. , 7 , 1 - 23
    13. 13)
      • Tayrani, R.: `A broadband monolithic S-band Class-E power amplifier', IEEE RFIC Symp. Dig., 2002, p. 53–56.
    14. 14)
      • Grebennikov, A.V., Jaeger, H.: `Class E with parallel circuit – a new challenge for high-efficiency RF and microwave power amplifiers', IEEE MTT-S Int. Microwave Symp. Dig., 2002, 3, p. 1627–1630.
    15. 15)
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