© The Institution of Engineering and Technology
The recent progress in the development of high-voltage SiC, GaN and diamond power devices is reviewed. Topics covered include the performance of various rectifiers and switches, material and process technologies of these wide band-gap semiconductor devices and future trends in device development and industrialisation.
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http://iet.metastore.ingenta.com/content/journals/10.1049/iet-cds_20070005
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