Wide band-gap power semiconductor devices
Wide band-gap power semiconductor devices
- Author(s): J. Millán
- DOI: 10.1049/iet-cds:20070005
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- Author(s): J. Millán 1
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View affiliations
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Affiliations:
1: CNM-CSIC, Campus Universitad Autónoma de Barcelona, Barcelona, Spain
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Affiliations:
1: CNM-CSIC, Campus Universitad Autónoma de Barcelona, Barcelona, Spain
- Source:
Volume 1, Issue 5,
October 2007,
p.
372 – 379
DOI: 10.1049/iet-cds:20070005 , Print ISSN 1751-858X, Online ISSN 1751-8598
The recent progress in the development of high-voltage SiC, GaN and diamond power devices is reviewed. Topics covered include the performance of various rectifiers and switches, material and process technologies of these wide band-gap semiconductor devices and future trends in device development and industrialisation.
Inspec keywords: power semiconductor devices; wide band gap semiconductors
Other keywords:
Subjects: Power semiconductor devices
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