RT Journal Article
A1 Mohamed Ali Belaïd

PB iet
T1 Symptom reliability: S-parameters evaluation of power laterally diffused-metal–oxide–semiconductor field-effect transistor after pulsed-RF life tests for a radar application
JN IET Circuits, Devices & Systems
VO 12
IS 5
SP 571
OP 578
AB This paper treats the s-parameter performance degradation by hot electron induced for N-MOSFET devices used in radar applications. This study is relevant for devices operating in the RF frequency regime. The power LD-MOSFET device (0.8 µm channel length, Gate oxide thickness 0.065 µm and 2.2 GHz) are designed and fabricated. Subsequently, life tests in pulsed RF cause, after ageing, the electrical behaviour and its relation with charge trapping at the interface are presented and discussed. Unlike all other current methods, a complete evaluation of S parameters is carried out to obtain key information concerning the defects location. The s-parameter performance degradation can be explained by the transconductance and the miller capacitance move, and by the leakage current augmentation IG, which is shown by hot-carrier event from the Si/SiO2 interface state generation and/or in a build up of negative charge. Also, the degradation can be predicted by the experimental correlation of RF and dc performance shifts, favour by the measurement of dc performance or initial leakage current. The analysis accompanied proves that the s-parameters shift by hot electron induced and should be taken into consideration in the design. Through physical processes of ATLAS-SILVACO simulations these degradation phenomena are located and confirmed
K1 pulsed-RF life testing
K1 hot electron
K1 power laterally diffused-N-MOSFET device
K1 frequency 2.2 GHz
K1 charge trapping
K1 size 0.8 mum
K1 voltage 65 V
K1 leakage current augmentation
K1 size 0.065 mum
K1 reliability
K1 ATLAS-SILVACO simulation
K1 transconductance
K1 Miller capacitance
K1 S-parameters evaluation
K1 radar application
K1 metal-oxide-semiconductor field-effect transistor
K1 power 10 W
DO https://doi.org/10.1049/iet-cds.2018.0005
UL https://digital-library.theiet.org/;jsessionid=1hoqdi4gis7a9.x-iet-live-01content/journals/10.1049/iet-cds.2018.0005
LA English
SN 1751-858X
YR 2018
OL EN