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access icon free Analytical modelling and performance analysis of gate engineered TG silicon-on-nothing metal–oxide–semiconductor field-effect transistor

© The Institution of Engineering and Technology
Received 08/11/2017, Accepted 27/02/2018, Revised 21/02/2018, Published 07/03/2018

This study presents a three-dimensional (3D) analytical model of triple material tri-gate silicon-on-nothing metal–oxide–semiconductor field-effect transistor. The performance of the device by varying the different device parameters as well as the device's immunity toward the various short channel effects such as Drain-induced barrier lowering (DIBL), hot carrier effect, threshold-voltage roll-off and subthreshold swing are investigated. The 3D Poisson's equation with appropriate boundary conditions is solved considering the parabolic potential approximation method to obtain the surface potential distribution. In addition, the calculations for threshold voltage and electric field are also done and the results obtained are verified using a 3D device simulator, namely ATLAS from SILVACO.

Inspec keywords: approximation theory; Poisson equation; silicon; elemental semiconductors; semiconductor device models; hot carriers; surface potential; MOSFET

Other keywords: electric field; 3D analytical model; metal-oxide-semiconductor field effect transistor; Si; threshold-voltage roll-off; short channel effect; DIBL; SILVACO; hot carrier effect; gate engineered triple material trigate silicon-on-nothing MOSFET; subthreshold swing; ATLAS; surface potential distribution; 3D device simulator; three-dimensional analytical model; TG; parabolic potential approximation method; SON; 3D Poisson's equation

Subjects: Insulated gate field effect transistors; Interpolation and function approximation (numerical analysis); Semiconductor device modelling, equivalent circuits, design and testing; Differential equations (numerical analysis)

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