RT Journal Article
A1 Sean E. Whitehall
A1 Carlos E. Saavedra

PB iet
T1 Compact 640 μW frequency-modulated ultra-wideband transmitter
JN IET Circuits, Devices & Systems
VO 12
IS 3
SP 226
OP 232
AB This study reports a frequency-modulated ultra-wideband transmitter optimised for low-power consumption. The chip includes a sub-oscillator tunable from 0.1 to 4 MHz, a radio-frequency oscillator tunable from 3.0 to 4.5 GHz, and an output power amplifier with a matching network. Depending on the channel selected, the measured transmitter consumes between 440 and 640 μW of power to produce −14 dBm continuously to a 50 Ω load. Two power supplies are used to reduce the effect of wasted voltage headroom between circuit blocks. Fabrication is done using the International Business Machines Corporation 130 nm complementary metal–oxide–semiconductor technology on a 1 mm × 1 mm loose die, the circuit occupies 0.2 mm2.
K1 wasted voltage headroom effect reduction
K1 output power amplifier
K1 power 640 muW
K1 size 130 nm
K1 sub-oscillator
K1 frequency 0.1 MHz to 4 MHz
K1 IBM complementary metal-oxide-semiconductor technology
K1 resistance 50 ohm
K1 circuit blocks
K1 power supplies
K1 frequency 3.0 GHz to 4.5 GHz
K1 compact frequency-modulated ultrawideband transmitter
K1 radio-frequency oscillator
K1 power 440 muW to 640 muW
K1 low-power consumption
K1 matching network
DO https://doi.org/10.1049/iet-cds.2017.0334
UL https://digital-library.theiet.org/;jsessionid=4ra7trq5r87q1.x-iet-live-01content/journals/10.1049/iet-cds.2017.0334
LA English
SN 1751-858X
YR 2018
OL EN