http://iet.metastore.ingenta.com
1887

Rigorous mathematical model of through-silicon via capacitance

Rigorous mathematical model of through-silicon via capacitance

For access to this article, please select a purchase option:

Buy eFirst article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IET Circuits, Devices & Systems — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Through-silicon vias (TSVs) are a key technology for three-dimensional integrated circuits. As the integration of circuits increases, high temperature has a greater effect on the performance of the TSV interconnections. The metal–oxide semiconductor (MOS) effect is one of the most important temperature-dependent characteristics of a TSV. This study introduces the mathematical model of a TSV to predict the MOS effect more accurately. The thermal effect that varies due to the change in the TSV capacitance and depletion region can be modelled by the non-linear the Poisson equation including mobile charge carriers. In procedures to solve this equation, the proposed method considers not only the thermal effect of intrinsic carrier concentration and silicon bandgap energy but also the shift effect of the flat band voltage due to the Si–SiO2 interface charges. In addition, since it considers the minority carrier generation rate, which is dependent on the change of gate voltage, the MOS effect in a TSV can be explained more accurately using equations derived from these procedures. To verify the proposed mathematical model, comparison with the numerical method is carried out, and these results show that the proposed method is very accurate in explaining the MOS effect in a TSV.

http://iet.metastore.ingenta.com/content/journals/10.1049/iet-cds.2017.0157
Loading

Related content

content/journals/10.1049/iet-cds.2017.0157
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address