http://iet.metastore.ingenta.com
1887

Analytical modelling of work-function modulated delta-doped TFET to improve analogue performance

Analytical modelling of work-function modulated delta-doped TFET to improve analogue performance

For access to this article, please select a purchase option:

Buy eFirst article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
— Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In this study, an analytical model for linearly modulated work-function-based delta-doped single-gate tunnel field-effect transistor (TFET) has been developed to improve the analogue performance. The impact of delta-doped layer and linearly modulated metal gate on different analogue parameters has been investigated extensively. The insertion of heavily doped delta layer in the source region improves ON current and current switching ratio performance significantly as compared to conventional TFET. Similarly, the presence of spatially work-function modulated metal gate reduces subthreshold swing and improves performance. The distance of the delta layer from the source–channel interface is optimised to 3 nm to maximise efficiency. The proposed model exhibits much improved analogue performance as compared to conventional TFET and delta-doped TFET. Thus, the model can be viewed as one of the potential replacements for metal–oxide–semiconductor field-effect transistors in ultra-low-power applications. However, the precision of present model is corroborated by using the two-dimensional TCAD Sentaurus simulator.

http://iet.metastore.ingenta.com/content/journals/10.1049/iet-cds.2017.0135
Loading

Related content

content/journals/10.1049/iet-cds.2017.0135
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address