Two-dimensional models for quantum effects on short channel electrostatics of lightly doped symmetric double-gate MOSFETs
- Author(s): Rana Y. El Kashlan 1, 2 ; Hamdy Abd El Hamid 2 ; Yehea I. Ismail 2
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View affiliations
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Affiliations:
1:
Department of Electronics and Communication , Misr International University , Cairo , Egypt ;
2: Centre of Nanoelectronics and Devices at Zewail City of Science and Technology/AUC , Cairo , Egypt
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Affiliations:
1:
Department of Electronics and Communication , Misr International University , Cairo , Egypt ;
- Source:
Volume 12, Issue 4,
July
2018,
p.
341 – 346
DOI: 10.1049/iet-cds.2017.0046 , Print ISSN 1751-858X, Online ISSN 1751-8598
Analytical Verilog-A compatible 2D model including quantum short channel effects and confinement for the potential, threshold voltage and the carrier charge sheet density for symmetrical lightly doped double-gate metal-oxide-semiconductor field effect transistors (MOSFETs) is developed. The proposed models are not only applicable to ultra-scaled devices but they have also been derived from 2D Poisson and 1D Schrödinger equations including 2D electrostatics, in order to incorporate quantum mechanical effects. Electron and hole quasi-Fermi potential effects were considered. The models are continuous and have been verified by comparison with COMSOL and BALMOS numerical simulations for channel lengths down to 7 nm at 1 nm oxide thicknesses; very good agreement within ±5% has been observed for silicon thicknesses down to 3 nm.
Inspec keywords: MOSFET; hardware description languages; Schrodinger equation; carrier density; semiconductor device models; Poisson equation; electrostatics
Other keywords: two-dimensional model; ultrascaled devices; oxide thickness; COMSOL numerical simulation; 1D Schrodinger equations; hole quasi-Fermi potential effects; BALMOS numerical simulation; carrier charge sheet density; 2D Poisson equations; 2D electrostatics; channel lengths; analytical Verilog-A compatible 2D model; quantum mechanical effects; silicon thickness; lightly doped symmetric double-gate MOSFET; threshold voltage; electron effects; quantum effects; short channel electrostatics
Subjects: Insulated gate field effect transistors; Differential equations (numerical analysis); Computer-aided circuit analysis and design; Electronic engineering computing; Differential equations (numerical analysis); Semiconductor device modelling, equivalent circuits, design and testing
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