This study presents a new complementary metal–oxide–semiconductor (CMOS) structure for a fully balanced four-terminal floating nullor (FBFTFN) which is suitable for ultra-low-voltage and low-power applications. This structure employs a bulk-driven quasi-floating-gate (BD-QFG) metal–oxide–semiconductor transistor technique to provide the capability of ultra-low-voltage, low-power operations as well as extended input voltage range. The functionality of the proposed circuits is demonstrated through simulations using SPICE and TSMC 0.18 µm n-well CMOS technology with supply voltage of 0.5 V and dissipation power of 9.4 µW. To confirm the attractive features of the proposed circuit, the fully balanced filters such as band-pass Sallen–Key filter, voltage-mode universal biquadratic filter and current-mode sixth-order low-pass filter using proposed BD-QFG FBFTFN as active elements have been designed.

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Fully-balanced four-terminal floating nullor for ultra-low voltage analogue filter design

References

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