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access icon free Lithography technology for advanced devices and introduction to integrated CAD analysis for hotspot detection

© The Institution of Engineering and Technology
Received 30/11/2015, Accepted 03/05/2016, Revised 14/04/2016, Published 01/01/2017

Optical projection lithography has been the workhorse of the integrate circuit (IC) manufacturing industry to transfer the computer-aided design (CAD) to semiconducting material wafers. The resolution limit of the 193 nm wavelength lithography which was initially targeted for the 90 nm design rule has been further extended to realise ∼10–20 nm devices with ingenious interventions. The three-dimensional fin-shaped field-effect transistor device structure now realise the <20 nm design rule still using 193 nm projection lithography as the widely accepted solution. The extreme ultraviolet wavelength source systems are still in development and testing phases with some recent success reported, but still falling short of supporting volume production requirements. This study reviews the current trends in lithography and the associated resolution enhancement techniques with brief introduction to an integrated CAD analysis for hotspot detection.

Inspec keywords: circuit CAD; ultraviolet lithography; field effect transistors; semiconductor materials

Other keywords: semiconducting material wafers; three-dimensional fin-shaped field-effect transistor device structure; resolution enhancement techniques; extreme ultraviolet wavelength source systems; volume production requirements; lithography technology; integrated CAD analysis; wavelength lithography; integrated circuit manufacturing industry; computer-aided design; optical projection lithography; IC; wavelength 193 nm; hotspot detection; size 90 nm

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Lithography (semiconductor technology); Other field effect devices; Electronic engineering computing

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