Wideband dual-mode complementary metal–oxide–semiconductor receiver

Rui Guan; Jing Jin; Wenjie Pan; Dongpo Chen; Jianjun Zhou

Wideband dual-mode complementary metal–oxide–semiconductor receiver

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Author(s): Rui Guan ¹ ; Jing Jin ¹ ; Wenjie Pan ¹ ; Dongpo Chen ¹ ; Jianjun Zhou ¹
- Affiliations: 1: School of Microelectronics, Center for Analog/RF Integrated Circuits (CARFIC), Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
Source: Volume 10, Issue 2, March 2016, p. 87 – 93
DOI: 10.1049/iet-cds.2015.0022 , Print ISSN 1751-858X, Online ISSN 1751-8598

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Received 21/07/2014, Accepted 09/09/2015, Revised 30/07/2015, Published 01/03/2016

A dual-mode complementary metal–oxide–semiconductor (CMOS) receiver operating from 1 to 2 GHz is presented. The proposed receiver employs a switchable low-noise amplifier (LNA) and two separated down-conversion paths to realise dual-mode operation. For receiving weak signals without large blockers, the receiver works in the high-gain mode which adopts the common gate (CG)–common source (CS) LNA and the active-mixer-based down-conversion path to achieve high gain and low noise figure (NF). In the case of large in-band blockers, the receiver works in the high linearity mode, which uses the LNA as a low-noise transimpedance amplifier followed by a 25% duty-cycle current-driving passive mixer and a transimpedance amplifier based on current buffer to obtain high in-band linearity. Implemented in a 0.18 μm CMOS technology, this receiver achieves 4.9 dB NF and a voltage gain range of 29.4–92.6 dB in high-gain mode, whereas +0.9 dBm in-band input-referred third-order interception and a voltage gain range of 15.8–20.1 dB in high linearity mode.

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Wideband dual-mode complementary metal–oxide–semiconductor receiver

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