access icon free Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time

A 600 V high-voltage gate drive IC (HVIC) using a novel robust isolation structure and a new delay circuit with low-temperature coefficient is proposed in this study. The novel isolation structure features with n-well islands alternatively arranged in the p-well region and its breakdown voltage is improved by about 7% (from 690 to 740 V) compared with the conventional isolation because of that the electrical field crowed in the p-well corner is ameliorated. The presented delay circuit used in the gate drive IC is composed of a temperature-insensitive ramp generator and a comparator. The typical turn-on/-off propagation delay time of the HVIC is 95 ns/85 ns and its maximum temperature coefficient is only 0.065 ns/°C.

Inspec keywords: bipolar integrated circuits; ramp generators; isolation technology; comparators (circuits); delay circuits; CMOS integrated circuits; power integrated circuits

Other keywords: breakdown voltage; high-voltage gate drive IC; isolation structure; comparator; robust isolation structure; delay circuit; voltage 600 V; low-temperature coefficient propagation delay time; bipolar-CMOS-DMOS technology; p-well region; temperature-insensitive ramp generator

Subjects: Signal generators; Power integrated circuits; Pulse circuits; Bipolar integrated circuits; CMOS integrated circuits; Power electronics, supply and supervisory circuits; Surface treatment (semiconductor technology); Function generators; Other digital circuits

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http://iet.metastore.ingenta.com/content/journals/10.1049/iet-cds.2014.0058
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