© The Institution of Engineering and Technology
Theoretical stability analysis of broadband cascode amplifiers at high frequencies is presented. The stability of the amplifier in the presence of parasitic inductive components is thoroughly investigated. It is shown that the stability can be improved by inserting a series resistance in the gate of common-gate device of the cascode amplifier. To ensure stability, the gate resistance should be selected within specific ranges that are derived analytically. Based on the insights provided by the analyses, several practical design guidelines are given to improve the stability of high-frequency broadband cascode amplifiers. Finally, the derived results are adopted in stabilisation of an X-band cascode amplifier implemented in a 0.18 μm complementary metal oxide semiconductor process.
References
-
-
1)
-
6. Shigematsu, H., Hirose, T., Brewer, F., Rodwell, M.: ‘Millimeter-wave CMOS circuit design’, IEEE Trans. Microw. Theory Tech., 2005, 53, (2), pp. 472–477 (doi: 10.1109/TMTT.2004.840758).
-
2)
-
1. Carson, R.: ‘High-frequency amplifiers’ (John Wiley & Sons, New York, 1975).
-
3)
-
18. Su, Y., O, K.K.: ‘An 800 μW 26 GHz CMOS tuned amplifier’. Proc. IEEE RFIC Symp., 2006, pp. 151–154.
-
4)
-
19. Chen, Y.-C., Wang, C.H., Lin, Y.-S.: ‘Low-power 24 GHz CMOS receiver front-end using isolation enhancement technique for automatic radar systems’, Microw. Opt. Technol. Lett., 2012, 54, (6), pp. 1471–1476 (doi: 10.1002/mop.26835).
-
5)
-
10. Hammad, H.F., Freundorfer, A.P., Antar, Y.M.M.: ‘Comprehensive study of multiband unconditional stabilization of common-source and common-gate MESFET transistors using feedback’, IEEE J. Solid-State Circuits, 2002, 37, (10), pp. 1260–1270 (doi: 10.1109/JSSC.2002.803016).
-
6)
-
Y.-N. Jen ,
J.-H. Tsai ,
T.-W. Huang ,
H. Wang
.
Design and analysis of a 55–71-GHz compact and broadband distributed active transformer power amplifier in 90-nm CMOS process.
IEEE Trans. Microw. Theory Tech.
,
1637 -
1646
-
7)
-
7. Deal, W.R., Biedenbender, M., Liu, P., Uyeda, J., Siddiqui, M., Lai, R.: ‘Analysis and design of broadband dual-gate balanced low-noise amplifiers’, IEEE J. Solid-State Circuits, 2007, 42, (10), pp. 2107–2115 (doi: 10.1109/JSSC.2007.904316).
-
8)
-
14. Liu, R., Lin, C.-S., Deng, L.-L., Wang, H.: ‘Design and analysis of DC-to-14-GHz and 22-GHz CMOS cascode distributed amplifiers’, IEEE J. Solid-State Circuits, 2004, 39, (8), pp. 1370–1374 (doi: 10.1109/JSSC.2004.831795).
-
9)
-
3. Razavi, B.: ‘RF microelectronics’ (Prentice-Hall, 2011, 2nd edn.).
-
10)
-
2. Pozar, D.M.: ‘Microwave engineering’ (Wiley, New York, 2005, 3rd edn.).
-
11)
-
16. Chang, H.-Y., Liu, Y.-C., Weng, S.-H., Lin, C.-H., Yeh, Y.-L., Wang, Y.-C.: ‘Design and analysis of a DC–43.5 GHz fully integrated distributed amplifier using GaAs HEMT–HBT cascode gain stage’, IEEE Trans. Microw. Theory Tech., 2011, 59, (2), pp. 443–455 (doi: 10.1109/TMTT.2010.2092786).
-
12)
-
9. Yeh, H.-C., Liao, Z.-Y., Wang, H.: ‘Analysis and design of millimeter-wave low-power CMOS LNA with transformer-multi cascode topology’, IEEE Trans. Microw. Theory Tech., 2011, 12, (59), pp. 3441–3454 (doi: 10.1109/TMTT.2011.2173350).
-
13)
-
20. Gharibdoust, K., Mousavi, N., Kalantari, M., Moezzi, M., Medi, A.: ‘A fully integrated 0.18 μm CMOS transceiver chip for X-band phased-array systems’, IEEE Trans. Microw. Theory Tech., 2012, 60, (7), pp. 2192–2202 (doi: 10.1109/TMTT.2012.2195020).
-
14)
-
13. Kozikowskit, J.L.: ‘Analysis and design of emitter followers at high frequencies’, IEEE Trans. Circuit Theory, 1964, 11, pp. 129–136 (doi: 10.1109/TCT.1964.1082247).
-
15)
-
8. Arbabian, A., Niknejad, A.M.: ‘Design of a CMOS tapered cascaded multistage distributed amplifier’, IEEE Trans. Microw. Theory Tech., 2009, 57, (4), pp. 938–947 (doi: 10.1109/TMTT.2009.2014433).
-
16)
-
11. Green, J.E., Tozer, R.C., David, J.P.R.: ‘Stability in small signal common base amplifiers’, IEEE Trans. Circuits Syst. I, 2013, 60, (4), pp. 846–855 (doi: 10.1109/TCSI.2012.2209709).
-
17)
-
F. Ellinger
.
26–42 GHz low noise amplifier MMIC fabricated on digital SOI CMOS technology.
IEEE J. Solid-State Circuits
,
3 ,
522 -
528
-
18)
-
12. Darwazeh, I., Wilson, B.: ‘Hybrid-π common base analysis’, IEEE Trans. Circuits Syst. I, 1990, 37, (5), pp. 655–656 (doi: 10.1109/31.55013).
-
19)
-
A. Komijani ,
A. Natarajan ,
A. Hajimiri
.
A 24 GHz, +14.5-dBm fully integrated power amplifier in 0.18-µm CMOS.
IEEE J. Solid-State Circuits
,
9
-
20)
-
C.F. Liao ,
S.I. Liu
.
A broadband noise-canceling CMOS LNA for 3.1–10.6-GHz UWB receivers.
IEEE J. Solid-State Circuits
,
2 ,
329 -
339
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