access icon free ‘New’ solutions of Class-E power amplifier with finite dc feed inductor at any duty ratio

‘New’ Class-E solutions are proposed by varying three different design parameters which are introduced in the voltage and current equations in order to extend the Class-E ‘design space’, of which the ‘new’ solutions can apply to optimal and suboptimal operation. The design procedure of suboptimal Class-E power amplifier (PA) is analysed in details and then a suboptimal Class-E PA based on GaN HEMT CGH40010F is designed to prove the correctness of the ‘new’ solutions. The measured maximum output power of 39.6 dB, power-added-efficiency of 74.7% and drain efficiency of 78.9% were obtained at 2.6 GHz with a 28 dBm input power. These measurement results show that a similar or better level of efficiency and output power that are reported for optimal Class-E PAs at lower frequencies using the same transistor, and the presented ‘new’ solutions extend the ‘design space’ of Class-E PA. This paper give engineers more degrees of freedom to design Class-E PA.

Inspec keywords: wide band gap semiconductors; gallium compounds; III-V semiconductors; inductors; UHF power amplifiers; high electron mobility transistors; UHF field effect transistors

Other keywords: class-E power amplifier design space; GaN; efficiency 78.9 percent; transistor; current equations; degrees of freedom; efficiency 74.7 percent; HEMT CGH40010F; frequency 2.6 GHz; voltage equations; finite dc feed inductor; suboptimal Class-E PA design procedure; duty ratio

Subjects: Amplifiers; Other field effect devices; Solid-state microwave circuits and devices

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