access icon free Parameters influencing the maximum controllable current in gate commutated thyristors

The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration.

Inspec keywords: optimisation; electric current control; voltage control; thyristors

Other keywords: buffer peak concentration; gate commutated thyristors; optimisation tool; shallow p-base thickness; GCT; interconnected numerical device segments model; dynamic performance; maximum controllable current; p-base depth; large area full wafer devices

Subjects: Optimisation techniques; Power semiconductor devices; Control of electric power systems; Voltage control; Thyristors and silicon controlled rectifiers; Optimisation techniques; Current control

References

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http://iet.metastore.ingenta.com/content/journals/10.1049/iet-cds.2013.0217
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