3.3 kV PT-IGBT with voltage-sensor monolithically integrated

Jesus Urresti; Salvador Hidalgo; David Flores; Daniel Fernández Hevia

3.3 kV PT-IGBT with voltage-sensor monolithically integrated

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Author(s): Jesus Urresti ¹ ; Salvador Hidalgo ¹ ; David Flores ¹ ; Daniel Fernández Hevia ²
- Affiliations: 1: Instituto de Microelectrónica de Barcelona, IMB-CNM-CSIC, Systems Integration Department, 08193 Campus UAB, Bellaterra, Spain;
  2: INAEL Electrical Systems S.A. C/Jarama 5, Polígono Industrial, 45007 Toledo, Spain
Source: Volume 8, Issue 3, May 2014, p. 182 – 187
DOI: 10.1049/iet-cds.2013.0213 , Print ISSN 1751-858X, Online ISSN 1751-8598

Received 13/06/2013, Accepted 12/02/2014, Revised 14/01/2014, Published 10/04/2014

An intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-controlled on-load tap changers and traction applications is analysed in this study. An anode voltage sensor monolithically integrated in the active area of a 3.3 kV–50 A PT-IGBT is introduced to enhance the robustness of the IGBT against short-circuit events. The operation mode of the anode voltage sensor is described and TCAD simulations are performed to describe the static and dynamic performance together with the interaction between the sensor and the IGBT core cells. The study of the anode voltage performance under inductive turn-off conditions is also included, comparing the behaviour of IGBTs with and without anode voltage sensor.

References

1. 1)
  - 4. Caramel, C., Flores, D., Hidalgo, S., et al.: ‘Experimental demonstration of an anode voltage sensor for high voltage IGBTs over-voltage protection’, Semiconductor Sci. Technol., 2010, 25, (11), (doi: 10.1088/0268-1242/25/11/115014).
2. 2)
  - 11. 2010 Sentaurus TCAD Tools Suite, Synopsys.
3. 3)
  - 12. Chen, D.Y., Lee, F.C., Carpenter, G.: ‘Non-destructive RBSOA characterization of IGBT's and MCT's’, IEEE Trans. Power Electron., 1995, 10, (3), pp. 368–372 (doi: 10.1109/63.388003).
4. 4)
  - 8. Urresti, J., Castellazzi, A., Piton, M., Rebollo, J., Mermet-Guyennet, M., Ciappa, M.: ‘Robustness test and failure analysis of IGBT during turn-off’, Microelectron. Reliab., 2007, 47, (9–11), pp. 1725–1729 (doi: 10.1016/j.microrel.2007.07.097).
5. 5)
  - X. Perpiñà , J.F. Serviere , X. Jordà . IGBT module failure analysis in railway applications. Microelectron. Reliab. , 1427 - 1431
6. 6)
  - 3. Vellvehi, M., Gálvez, J.L., Perpina, X., Jorda, X., Godignon, P., Millan, J.: ‘Low-cost trench isolation technique for reverse blocking IGBT using boron nitride doping wafers’, Microelectron. Eng., 2010, 87, (11), pp. 2323–2327 (doi: 10.1016/j.mee.2010.03.011).
7. 7)
  - 7. Flores, D., Hidalgo, S., Rebollo, J., et al: ‘Investigation on 3.3 kV-50 A IGBT protection against over-voltage conditions’. European Conf. on Power Electronics and Applications, 2009.
8. 8)
  - 1. Gomez, A., Monroy, D.: ‘Solid-state tap changers: new configurations and applications’, IEEE Trans. Power Deliv., 2007, 22, (4), pp. 2228–2235 (doi: 10.1109/TPWRD.2007.905792).
9. 9)
  - 5. Bencuya, I., Kwan, S.H., Saap, S.P.: ‘Self aligned method of fabricating terrace gate DMOS transistor’. US Patent, US879994A, 1999.
10. 10)
  - 9. Housen, T., Watanabe, M.: ‘Semiconductor device with independent over-current and short-circuit protection’. US Patent, US5396117, 1995.
11. 11)
  - 2. Faiz, J., Siahkolah, B.: ‘New solid-state onload tap-changers topology for distribution transformers’, IEEE Trans. Power Deliv., 2003, 18, (1), pp. 136–141 (doi: 10.1109/TPWRD.2002.803723).
12. 12)
  - X. Perpiñà , J.F. Serviere , J. Urresti-Ibañez . Analysis of clamped inductive turnoff failure in railway traction IGBT power modules under overload conditions. IEEE Trans. Ind. Electron. , 7 , 2706 - 2714

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3.3 kV PT-IGBT with voltage-sensor monolithically integrated

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