Analysis study of sensitive volume and triggering criteria of single-event burnout in super-junction metal-oxide semiconductor field-effect transistors

Moustafa Zerarka; Patrick Austin; Frédéric Morancho; Karine Isoird; Houssam Arbess; Josiane Tasselli

Analysis study of sensitive volume and triggering criteria of single-event burnout in super-junction metal-oxide semiconductor field-effect transistors

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Author(s): Moustafa Zerarka ^{1, 2} ; Patrick Austin ^{1, 3} ; Frédéric Morancho ^{1, 3} ; Karine Isoird ^{1, 3} ; Houssam Arbess ^{1, 2} ; Josiane Tasselli ^{1, 2}
- Affiliations: 1: LAAS, CNRS, 7 avenue du colonel Roche, BP 54200, Toulouse Cedex4 F-31031, France;
  2: LAAS, Univ de Toulouse, Toulouse F-31031, France;
  3: Univ de Toulouse, UPS, LAAS, Toulouse F-31031, France
Source: Volume 8, Issue 3, May 2014, p. 197 – 204
DOI: 10.1049/iet-cds.2013.0211 , Print ISSN 1751-858X, Online ISSN 1751-8598

Received 11/06/2013, Accepted 11/02/2014, Revised 10/01/2014, Published 30/04/2014

Power metal-oxide semiconductor field effect transistors (MOSFETs) are more and more used in atmospheric and space applications. Thus, it is essential to study the influence of the natural radiation environment on the electrical behaviour of vertical double-diffused metal-oxide semiconductor (VDMOS) and super-junction (SJ) MOSFETs. Two-dimensional numerical simulations are performed to define the sensitive volume and triggering criteria of single-event burnout (SEB) for VDMOS and SJ MOSFETs for different configurations of ionising tracks. The analysis of the results allows a better understanding of the SEB mechanism in each structure and allows the behaviour and robustness comparison for these two technologies under heavy-ion irradiation.

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Analysis study of sensitive volume and triggering criteria of single-event burnout in super-junction metal-oxide semiconductor field-effect transistors

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