0.5-V bulk-driven CMOS operational amplifier
- Author(s): Tomasz Kulej 1
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View affiliations
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Affiliations:
1:
Department of Electrical Engineering, Technical University of Częstochowa, 42-201 Częstochowa, Poland
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Affiliations:
1:
Department of Electrical Engineering, Technical University of Częstochowa, 42-201 Częstochowa, Poland
- Source:
Volume 7, Issue 6,
November 2013,
p.
352 – 360
DOI: 10.1049/iet-cds.2012.0372 , Print ISSN 1751-858X, Online ISSN 1751-8598
© The Institution of Engineering and Technology
Received
25/05/2012,
Accepted
14/03/2013,
Revised
14/03/2013,
Published
A new solution for a low-voltage bulk-driven CMOS operational amplifier is presented in this study. The amplifier is designed using 50 nm process parameters and optimised for 0.5 V supply voltage. The circuit consumes 100 μW, performing 74 dB open-loop gain, 59 nV/Hz1/2 input referred noise at 1 MHz and 4.8 MHz gain bandwidth product (GBP) for 20 pF load capacitance.
Inspec keywords: CMOS integrated circuits; low-power electronics; operational amplifiers
Other keywords: size 50 nm; voltage 0.5 V; noise performance; gain 74 dB; common-mode amplifiers; power 100 muW; low-voltage bulk-driven CMOS operational amplifier
Subjects: CMOS integrated circuits; Amplifiers
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