Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Output-capacitorless low-dropout regulator using a cascoded flipped voltage follower

Output-capacitorless low-dropout regulator using a cascoded flipped voltage follower

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IET Circuits, Devices & Systems — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

An improved flipped voltage follower (FVF) and its application to a low-dropout (LDO) voltage regulator are presented. The proposed FVF improves most weaknesses of the classical one, namely its poor time response to the output current change from low to high value and poor stability for large capacitive load. The most important parameters of the modified FVF are analysed and described by analytical expressions. The parameters of the classical FVF and the improved one are compared and discussed. LDO regulator using the improved FVF is designed and implemented in AMS CMOS 0.35 µm technology. The measurement results of a test circuit show its relatively high current efficiency of 74 and 99.93% for output current 100 µA and 50 mA, respectively. The output voltage overshoot and undershoot are below 46 and 75 mV for output current change from 0.1 to 50 mA with the rise and fall times equal to 0.3 µs, and load capacitance 0–100 pF.

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
    8. 8)
    9. 9)
    10. 10)
    11. 11)
    12. 12)
    13. 13)
      • Chen, H., Leung, K.N.: `A fast-transient LDO based on buffered flipped voltage follower', Int. Conf. Electron Devices and Solid-State Circuits (EDSSC), 2010, p. 1–4.
    14. 14)
    15. 15)
    16. 16)
    17. 17)
    18. 18)
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-cds.2010.0431
Loading

Related content

content/journals/10.1049/iet-cds.2010.0431
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address