© The Institution of Engineering and Technology
The authors present the wafer scale fabrication and characteristics of back-gate semiconducting carbon nanotube thin-film field-effect transistors (SN-TFTs) suitable for high-current applications. Good on–off current ratio TFTs using affordable 95% purity semiconducting tubes by appropriately choosing the length of the nanotubes and improving the nanotube density have been demonstrated. Moreover, the nanotube thin-film deposition is carried out using a simple solution-based assembly method and good TFT performance and high currents are achieved with random-oriented network of nanotubes. Hafnium oxide (HfOx) is used as the gate dielectric material to improve the device performance. The global gate devices have shown an excellent p-type behaviour with a low output conductance value of 0.3 µS. The SN-TFTs have exhibited a maximum on–off ratio of 4×104 at lower operating gate voltages, a maximum on-current of 3.1 mA at a current density of 6.2 µA/µm, a steep sub-threshold slope of 600 mV/decade, threshold voltage of −1.5 V, a maximum normalised transconductance of 0.7 µS/µm and a maximum carrier mobility of 44.2 cm2/V s.
References
-
-
1)
-
L. Hu ,
D.S. Hecht ,
G. Gruener
.
Percolation in transparent and conducting carbon nanotube networks.
Nano Lett.
,
2513 -
2517
-
2)
-
M.S. Arnold ,
A.A. Green ,
J.F. Hulvat ,
S.I. Stupp ,
M.C. Hersam
.
Sorting carbon nanotubes by electronic structure using density differentiation.
Nat. Nanotechnol.
,
60 -
65
-
3)
-
H. Kataura ,
Y. Kumazawa ,
Y. Maniwa
.
Optical properties of single-wall carbon nanotubes.
Synth. Met.
,
2555 -
2558
-
4)
-
M.C. LeMieux ,
S. Sok ,
M.E. Roberts
.
Solution assembly of organized carbon nanotube networks for thin-film transistors.
ACS Nano
,
4089 -
4097
-
5)
-
H. Ko ,
V.V. Tsukruk
.
Liquid-crystalline processing of highly oriented carbon nanotube arrays for thin-film transistors.
Nano Lett.
,
1443 -
1448
-
6)
-
E.S. Snow ,
J.P. Novak ,
P.M. Campbell ,
D. Park
.
Random networks of carbon nanotubes as an electronic material.
Appl. Phys. Lett.
-
7)
-
M.C. LeMieux ,
M. Roberts ,
S. Barman ,
Y.W. Jin ,
J.M. Kim ,
Z. Bao
.
Self-sorted, aligned nanotube networks for thin-film transistors.
Science
,
101 -
104
-
8)
-
D. Chattopadhyay ,
I. Galeska ,
F. Papadimitrakopoulos
.
A route for bulk separation of semiconducting from metallic single-wall carbon nanotubes.
J. Am. Chem. Soc.
,
3370 -
3375
-
9)
-
M. Engel ,
P.J. Small ,
M. Steiner
.
Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays.
ACS Nano
,
2445 -
2452
-
10)
-
W.J. Yu ,
U.J. Kim ,
B.R. Kang ,
I.H. Lee ,
E.H. Lee ,
Y.H. Lee
.
Adaptive logic circuits with doping-free ambipolar carbon nanotube transistors.
Nano Lett.
,
1401 -
1405
-
11)
-
G.D. Wilk ,
R.M. Wallace ,
J.M. Anthony
.
High-K gate dielectrics: current status and materials properties considerations.
J. Appl. Phys.
,
10 ,
5243 -
5275
-
12)
-
C. Wang ,
J. Zhang ,
K. Ryu ,
A. Badmaev ,
L.G.D. Arco ,
C. Zhou
.
Wafer-scale fabrication of separated carbon nanotube thin-film transistors for display applications.
Nano Lett.
,
4285 -
4291
-
13)
-
M.S. Arnold ,
S.I. Stupp ,
M.C. Hersam
.
Enrichment of single-walled carbon nanotubes by diameter in density gradients.
Nano Lett.
,
713 -
718
-
14)
-
M.D. Lay ,
J.P. Novak ,
E.S. Snow
.
Simple route to large-scale ordered arrays of liquid-deposited carbon nanotubes.
Nano Lett.
,
603 -
606
-
15)
-
M. Milnera ,
J. Kurti ,
M. Hulman ,
H. Kuzmany
.
Periodic resonance excitation and intertube interaction from quasi continuous distributed helicities in single-wall carbon nanotubes.
Phys. Rev. Lett.
,
1324 -
1327
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-cds.2010.0424
Related content
content/journals/10.1049/iet-cds.2010.0424
pub_keyword,iet_inspecKeyword,pub_concept
6
6