RT Journal Article
A1 M.H. Moaiyeri
A1 A. Doostaregan
A1 K. Navi

PB iet
T1 Design of energy-efficient and robust ternary circuits for nanotechnology
JN IET Circuits, Devices & Systems
VO 5
IS 4
SP 285
OP 296
AB Novel high-performance ternary circuits for nanotechnology are presented here. Each of these carbon nanotube field-effect transistor (CNFET)-based circuits implements all the possible kinds of ternary logic, including negative, positive and standard ternary logics, in one structure. The proposed designs have good driving capability and large noise margins and are robust. These circuits are designed based on the unique properties of CNFETs, such as the capability of setting the desired threshold voltage by changing the diameters of the nanotubes. This property of CNFETs makes them very suitable for the multiple-Vt design method. The proposed circuits are simulated exhaustively, using Synopsys HSPICE with 32 nm-CNFET technology in various test situations and different supply voltages. Simulation results demonstrate great improvements in terms of speed, power consumption and insusceptibility to process variations with respect to other conventional and state-of-the-art 32 nm complementary metal-oxide semiconductor and CNFET-based ternary circuits. For instance at 0.9 V, the proposed ternary logic and arithmetic circuits consume on average 53 and 40% less energy, respectively, compared to the CNFET-based ternary logic and arithmetic circuits, recently proposed in the literature.
K1 nanotechnology
K1 energy-efficient design
K1 power consumption
K1 arithmetic circuits
K1 multiple-voltage design method
K1 CNFET circuits
K1 complementary metal-oxide semiconductor ternary circuits
K1 size 32 nm
K1 ternary logic circuit
K1 high-performance ternary circuits
K1 voltage 0.9 V
K1 noise margins
K1 Synopsys HSPICE
K1 threshold voltage
K1 carbon nanotube field-effect transistor
DO https://doi.org/10.1049/iet-cds.2010.0340
UL https://digital-library.theiet.org/;jsessionid=10pa3sjzg8iqx.x-iet-live-01content/journals/10.1049/iet-cds.2010.0340
LA English
SN 1751-858X
YR 2011
OL EN