Despite many years of effort, the precise origin of negative differential resistance (NDR) shown by some organic layers remains unclear. Tang et al. accounted qualitatively for NDR phenomena by coulomb blockade of single-electron transistors (SETs). From this foundation, a novel method based on analysis of the charge stability diagram of a SET is proposed in this study. The method can be used to systematically analyse negative differential conductance (NDC) characteristic of a SET and some organic layers. With this method, the NDC effect is explained with respect to device parameters, and several NDC cells proposed by others are analysed in detail. The results show that this method can be efficiently used to analyse the NDC effect of SETs and some organic layers.
Inspec keywords: single electron transistors; Coulomb blockade
Other keywords:
Subjects: Quantum interference devices
References
-
-
1)
- Wasshuber, C.: `About single-electron devices and circuits', 1998, PhD, , Vienna, TU.
-
2)
- C.D. Dimitrakopoulos , P.R.L. Malenfant . Organic thin film transistors for large area electronics. Adv. Mater. , 2 , 99 - 117
-
3)
- L.D. Bozano , B.W. Kean , V.R. Deline , J.R. Salem , J.C. Scott . Mechanism for bistability in organic memory elements. Appl. Phys. Lett. , 4 , 607 - 609
-
4)
- H. Inokawa , A. Fujiwara , Y. Takahashi . Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors. Appl. Phys. Lett. , 3618 - 3620
-
5)
- H. Zhang , P. Mazumder , L. Ding , K. Yang . Performance modeling of resonant tunneling-based random-access memories. IEEE Trans. Nanotechnol. , 4 , 472 - 480
-
6)
- J. Park , A.N. Pasupathy , J.I. Goldsmith . Coulomb blockade and the Kondo effect in single-atom transistors. Nature , 13 , 722 - 725
-
7)
- S. Mahapatra , A.M. Ionescu . A novel single electron SRAM architecture. IEEE Conf. Nanotechnol. , 3 , 287 - 289
-
8)
- S. Ganguly , L.F. Register , A.H. MacDonald , S.K. Banerjee . Two-level voltage-controlled magnetization switch using a ferromagnetic semiconductor resonant-tunneling diode. IEEE Trans. Nanotechnol. , 1 , 30 - 36
-
9)
- M.C. Shin , S.J. Lee , K.W. Park , E.H. Lee . Geometrically induced multiple Coulomb blockade gaps. Phys. Rev. Lett. , 26 , 5774 - 5777
-
10)
- M. Saitoh , H. Harata , T. Hiramoto . Room-temperature demonstration of low-voltage and tunable static memory based on negative differential conductance in silicon single-electron transistors. Appl. Phys. Lett. , 25 , 6233 - 6235
-
11)
- K.K. Likharev . Single-electron devices and their applications. Proc. IEEE , 4 , 606 - 632
-
12)
- D.L. Klein , R. Roth , A.K.L. Lim , A.P. Alivisatos , P.L. McEuen . A single-electron transistor made from a cadmium selenide nanocrysta. Nature , 6652 , 699 - 701
-
13)
- L.D. Bozano , B.W. Kean , M. Beinhoff , K.R. Carter , J.C. Scott . Organic materials and thin-film structures for cross-point memory cells based on trapping in metallic nanoparticles. Adv. Funct. Mater. , 12 , 1933 - 1939
-
14)
- J.C. Scott , L.D. Bozano . Nonvolatile memory elements based on organic materials. Adv. Mater. , 11 , 1452 - 1463
-
15)
- L. Ma , S. Pyo , J. Ouyang , Q. Xu , Y. Yang. . Nonvolatile electrical bistability of organic/metal-nanocluster/organic system. Appl. Phys. Lett. , 1419 - 1421
-
16)
- P. Gupta , N.K. Jha . An algorithm for nanopipelining of RTD-based circuits and architectures. IEEE Trans. Nanotechnol. , 2 , 159 - 167
-
17)
- C. Wasshuber . Computational single-electronics.
-
18)
- H. Kim , K. Seo . Noninverted inverted monostabel-to-bistable transition logic element circuits using three resonant tunneling diodes and their application to a static binary frequency divider. Jpn. J. Appl. Phys. , 4 , 2854 - 2857
-
19)
- H. Inokawa , A. Fujiwara , Y. Takahashi . A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors. IEEE Trans. Electron Devices , 2 , 462 - 470
-
20)
- J.G. Simmons , R.R. Verderber . New conduction and reversible memory phenomena in thin insulating films. Proc. R. Soc. Lond. A, Math. Phys. Sci. , 1464 , 77 - 102
-
21)
- G.J. Evans , H. Mizuta . Analysis of negative differential conductance in a two-island Coulomb blockade system by a polytope approximation in phase space. J. Appl. Phys. , 6 , 3124 - 3129
-
22)
- K. Miyaji , M. Saitoh , T. Hiramoto . Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors. Appl. Phys. Lett. , 14
-
23)
- N. Stutzmann , R.H. Friend , H. Sirringhaus . Self-aligned, vertical-channel, polymer field-effect transistors. Science , 5614 , 1881 - 1885
-
24)
- W. Tang , H. Shi , G. Xu . Memory effect and negative differential resistance by electrode-induced two dimensional single-electron tunneling in molecular an organic electronic devices. Adv. Mater. , 19 , 2307 - 2311
-
25)
- Inokawa, H., Takahashi, Y.: `Experimental and simulation studies of single-electron-transistor-based multiple-valued logic', Proc. 33rd Int. Symp. on Multiple-Valued Logic., 2003, Tokyo, Japan, p. 259–266.
-
26)
- C.P. Heij , D.C. Dixon , P. Hadley , J.E. Mooij . Negative differential resistance due to single-electron switching. Appl. Phys. Lett. , 7 , 1042 - 1044
-
27)
- V. Nguyen , V. Nguyen . Coulomb blockade and negative differential conductance in metallic double-dot devices. J. Appl. Phys. , 6 , 3302 - 3306
-
28)
- Y. Yang , J.Y. Ouyang , L.P. Ma , R.J.H. Tseng , C.W. Chu . Electrical switching and bistability in organic/polymeric thin films and memory devices. Adv. Funct. Mater. , 8 , 1001 - 1014
-
29)
- D. Tondelier , K. Lmimouni , D. Vuillaume , C. Fery , G. Haas . Metal/organic/metal bistable memory devices. Appl. Phys. Lett. , 23 , 5763 - 5765
-
1)
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-cds.2009.0247
Related content
content/journals/10.1049/iet-cds.2009.0247
pub_keyword,iet_inspecKeyword,pub_concept
6
6