© The Institution of Engineering and Technology
A wide-band crossbar switch configured as a non-blocking signal router can be used in various applications that need reconfigurable digital or analog cross connections such as network switches, CPU-memory connecting modules and wide tuning range radar switches. Current mode logic using IBM 8HP SiGe heterojunction bipolar transistors having fTs of 210 GHz and a symmetrical signal path design are employed to make a 40 GHz crossbar switch capable of 80 Gb/s transmission with a fast reconfiguration time of 160 ps. A unique feature of this crossbar is that the delay through any path in the switch is constant. The fT of IBM's 8XP SiGe model is 350 GHz, which allows for faster circuits than the 8HP technology. The crossbar switch using IBM's 8XP kit is simulated to predict further performance improvement to 50 GHz (100 Gb/s for binary signals). To demonstrate the maximum operating speed, the crossbar switch is tested as a 40 GHz phase router for a phased array antenna system. The measured output of the crossbar switch is a 38.8 GHz sine wave with the selected phase delay. The phase noise of the output signal is −88.3 dBc/Hz for an input whose phase noise is −98 dBc/Hz at 1 MHz offset. Using a 2.5 V supply, the 8HP crossbar switch consumes 2.2–5.7 W depending on the number of active channels. The power dissipation of the crossbar switch can be reduced by about 70% with the same performance by using the 8XP kit.
References
-
-
1)
-
D.L. Harame ,
B.S. Meyerson
.
The early history of IBM's SiGe mixed signal technology.
IEEE Trans. Electron Devices
,
11 ,
2555 -
2567
-
2)
-
K.-J. Koh ,
G.M. Rebeiz
.
0.13-μm CMOS phase shifters for X, Ku and K-band phased-arrays.
IEEE J. Solid-State Circuits
,
11 ,
2535 -
2546
-
3)
-
Alalusi, S., Brodersen, R.: `A 60 GHz phased array in CMOS', Custom Integrated Circuits Conf., September 2006, p. 393–396.
-
4)
-
A.G. Metzger
.
A 10-Gb/s high-isolation, 16(16 crosspoint switch implemented with ALGaAs/GaAs HBT's.
IEEE J. Solid-State Circuits
,
4 ,
593 -
600
-
5)
-
B.S. Goda ,
J.F. McDonald ,
S.R. Carlough ,
T.W. Krawczyk ,
R.P. Kraft
.
SiGe HBT BiCMOS FPGAs for fast reconfigurable computing.
IEE Proc.-Comput. Digit Tech
,
3 ,
189 -
194
-
6)
-
Khater, M., Rieh, J.-S., Adam, T.: `SiGe HBT technology with fmax/fT=350/300 GHz and gate delay below 3.3 ps', International Electron Device Meeting (IEDM) Technical Digest, 2004, p. 247–250.
-
7)
-
Carlson, G.: `Trusted foundry: the path to advanced SiGe technology', Compound Semiconductor Integrated Circuit Symp. (CSIC), 2005, p. 9–12.
-
8)
-
M. Chu ,
P. Jacob ,
J.-W. Kim ,
M.R. LeRoy ,
R.P. Kraft ,
J.F. McDonald
.
A 40 Gs/s time interleaved ADC using SiGe BiCMOS technology.
IEEE J. Solid-State Circuits
,
2 ,
380 -
390
-
9)
-
J. Tang
.
Analysis and design of an optimally coupled 5-GHz quadrature LC oscillator.
IEEE J. Solid-State Circuits
,
657 -
662
-
10)
-
A. Hajimiri ,
A. Komijani ,
A. Nataraja ,
R. Chunara ,
X. Guan
.
Phased array systems in silicon.
IEEE Commun. Mag.
,
8 ,
122 -
130
-
11)
-
Joseph, A., Lanzerotti, L., Liu, X.: `Advances in SiGe HBT BiCMOS technology', Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2004, p. 1–4.
-
12)
-
H. Hashemi ,
X. Guan ,
A. Komijani ,
A. Hajimiri
.
A 24-GHz size phased-array receiver-LO phase-shifting approach.
IEEE Trans. Microw. Theory Tech.
,
2 ,
614 -
626
-
13)
-
J.-R. Guo ,
C. You ,
M. Chu
.
Silicon germanium programmable circuits for gigahertz applications.
IET Circuits Devices Syst.
,
1 ,
27 -
33
-
14)
-
K.S. Lowe
.
A GaAs HBT 16(16 10-Gb/s/channel crosspoint switch.
IEEE J. Solid-State Circuits
,
8 ,
1263 -
1268
-
15)
-
M. Cooperman
.
High speed current mode logic for LSI.
IEEE Trans. Circuits Syst.
,
7 ,
626 -
635
-
16)
-
A.J. Joseph ,
D.L. Harame ,
B. Jagannathan
.
Status and direction of communication technologies – SiGe BiCMOS and RFCMOS.
Proc. IEEE
,
9 ,
1539 -
1558
-
17)
-
K. Martin
.
(2000)
Digital integrated circuit design.
-
18)
-
B.C. Kane ,
L.A. Geis ,
M.A. Wyatt ,
D.G. Copeland ,
J.A. Mogensen
.
Smart phased array SoCs: a novel application for advanced SiGe HBT BiCMOS technology.
Proc. IEEE
,
9 ,
165 -
1668
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-cds.2009.0178
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