Bootstrapped inverter using a pentacene thin-film transistor with a poly(methyl methacrylate) gate dielectric

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Bootstrapped inverter using a pentacene thin-film transistor with a poly(methyl methacrylate) gate dielectric

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A bootstrapped inverter incorporating pentacene organic thin-film transistors (OTFTs), with poly(methyl methacrylate) as the gate dielectric, has been designed, fabricated and tested. The inverter uses capacitive coupling and bootstrapping effects, and exhibits superior performance to the normal diode-connected load inverter. The pentacene OTFTs used for the inverter possess a field-effect mobility of 0.32 cm2/V/s, a threshold voltage of −10.0 V, a subthreshold slope of 1.5 V per decade and an on/off current ratio of 2.2×106. The inverter has a 30 µs rise time and a 450 µs fall time, at an operating frequency of 1 kHz and 30 V drive voltage.

Inspec keywords: thin film transistors; semiconductor device testing; semiconductor device models; organic field effect transistors; organic compounds; semiconductor device manufacture

Other keywords: frequency 1 kHz; voltage 1.5 V; pentacene thin-film transistor; bootstrapped inverter; poly(methyl methacrylate) gate dielectric; capacitive coupling; voltage 30 V; bootstrapping effects; time 450 mus; time 30 mus; drive voltage; diode-connected load inverter; pentacene organic thin-film transistors; OTFT

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Other field effect devices; Production facilities and engineering

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