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Development of ultra wideband, high efficiency, distributed power amplifiers using discrete GaN HEMTs

Development of ultra wideband, high efficiency, distributed power amplifiers using discrete GaN HEMTs

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This study describes the design and performance of a discrete ultra wideband GaN HEMT distributed power amplifier (DPA) with over 5 W (37 dBm) output power and a PAE exceeding 27% in the 0.02–3 GHz frequency range. The implemented DPA design is comprised of three discrete GaN HEMT devices. Its performance was enhanced using tapered drain lines and non-uniform gate capacitive coupling. The design methodology is based on both small and large signal analysis using harmonic balance technique, and their associated predicted and experimental results are discussed here in detail.

Inspec keywords: III-V semiconductors; distributed amplifiers; ultra wideband technology; UHF power amplifiers; high electron mobility transistors; gallium compounds; wide band gap semiconductors

Other keywords: discrete HEMT devices; ultra wideband distributed power amplifiers; DPA design; harmonic balance technique; large-signal analysis; small-signal analysis; nonuniform gate capacitive coupling; GaN; frequency 0.02 GHz to 3 GHz

Subjects: Amplifiers; Other field effect devices

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