Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 µm at room-temperature

InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 µm at room-temperature

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Engineering and Technology
Published

Laser diodes based on 4ML InAs/3ML GaSb/1ML InSb/3ML GaSb short-period superlattices (SPSLs) for emission in the 3–3.5 µm wavelength range have been investigated. Lasing is demonstrated up to 300 K in pulsed conditions and up to 200 K under continuous wave operation. Laser emission is centred at ∼3.3 µm, a technologically very important wavelength. The results demonstrate the potential of these new active zones for mid-IR laser diodes.

Inspec keywords: gallium compounds; indium compounds; semiconductor lasers; laser beams; semiconductor superlattices; III-V semiconductors; infrared spectra

Other keywords: continuous wave operation; SPSL; laser emission; temperature 293 K to 298 K; wavelength 3 mum to 3.5 mum; mid-IR laser diode; short-period superlattice diode laser; InAs-GaSb-InSb

Subjects: Laser beam interactions and properties; Laser beam characteristics and interactions; Semiconductor lasers; Lasing action in semiconductors; Design of specific laser systems

References

    1. 1)
    2. 2)
      • N. Deguffroy , V. Tasco , A. Gassenq , L. Cerutti , A. Trampert , A.N. Baranov , E. Tournié . InAs/GaSb short-period superlattice injection lasers operating in the 2.5 µm to 3.5 µm mid-infrared wavelength range. Electron. Lett. , 1285 - 1286
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
    8. 8)
      • J. Devenson , O. Cathabard , R. Teissier , A.N. Baranov . High temperature operation of λ ∼ 3.3 µm quantum cascade lasers. Appl. Phys. Lett.
    9. 9)
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20092882
Loading

Related content

content/journals/10.1049/el_20092882
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address