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Immediate soft error detection using pass gate logic for content addressable memory

Immediate soft error detection using pass gate logic for content addressable memory

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© The Institution of Engineering and Technology
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Content addressable memory (CAM) is used in many applications. As the process technology scales into the deep sub-micron regime, soft error rate increases significantly. Densely integrated memory cells in CAM are prone to soft errors. Bit flipping in CAM leads to an incorrect search operation which could be fatal from a system point of view. The proposed scheme enables the detection of soft errors immediately and the correction of problems with small additional logic gates.

Inspec keywords: content-addressable storage; logic gates

Other keywords: soft error detection; pass gate logic; content addressable memory; deep sub-micron regime; bit flipping; CAM; integrated memory cells

Subjects: Associative storage; Memory circuits; Logic circuits; Logic elements

References

    1. 1)
      • Noda, H., Dosaka, K., Morishita, F., Arimoto, K.: `A soft-error-immune maintenance-free TCAM architecture with associated embedded DRAM', Proc. IEEE Custom Integrated Circuits Conf, September 2005, San Jose, CA, USA, p. 451–454.
    2. 2)
      • Azizi, N., Najm, F.: `A family of cells to reduce the soft-error-rate in ternary-CAM', Proc. Design Automation Conf, July 2006, San Francisco, CA, USA, p. 779–784.
    3. 3)
      • Azizi, N., Najm, F.: `A soft-error tolerant content-addressable memory (CAM) using an error-correcting-match scheme, Kostas Pagiamtzis', Proc. IEEE Custom Integrated Circuits Conf., September 2005, San Jose, CA, USA, p. 301–304.
    4. 4)
      • http://www.eas.asu.edu/~ptm/, accessed December 2007.
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