N-type ohmic contact on type-II InAs/GaSb strained layer superlattices

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N-type ohmic contact on type-II InAs/GaSb strained layer superlattices

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Different metallisation schemes for the formation of n-type ohmic contact on type-II InAs/GaSb strained layer superlattice material are reported. The specific contact resistance of metal contacts was evaluated by the transfer length method. The Ge(282Å)/Au(547Å)/Ni (50Å)/Pt(470Å)/Au(2001Å) contact yielded a specific contact resistance of 1.6×10−5 Ωcm2 (rapid thermal anneal, 380°C, 60 s).

Inspec keywords: gallium compounds; platinum; metallisation; contact resistance; ohmic contacts; indium compounds; rapid thermal annealing; gold; III-V semiconductors; semiconductor epitaxial layers; germanium; nickel

Other keywords: InAs-GaSb; n-type ohmic contact; metallisation schemes; rapid thermal annealing; Ge-Au-Ni-Pt; temperature 380 degC; type-II strained layer superlattices; transfer length method; contact resistance; time 60 s

Subjects: Contact resistance, contact potential, and work functions; II-VI and III-V semiconductors; Annealing processes; Semiconductor-metal interfaces; Metallisation and interconnection technology; Annealing processes in semiconductor technology; Electrical properties of metal-nonmetal contacts

References

    1. 1)
      • J.B. Rodriguez , E. Plis , G. Bishop , Y.D. Sharma , H.S. Kim , L.R. Dawson , S. Krishna . nBn structure based on InAs/GaSb type-II strain layer superlattices. Appl. Phys. Lett. , 043514 - 043516
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      • A. Khoshakhlagh , J.B. Rodriguez , E. Plis , G.D. Bishop , Y.D. Sharma , H.S. Kim , L.R. Dawson , S. Krishna . Bias dependent dual band response from InAs/Ga(in)Sb type II strain layer superlattice detectors. Appl. Phys. Lett. , 263504 - 263506
    3. 3)
      • G. Bishop , E. Plis , J.B. Rodriguez , Y.D. Sharma , H.S. Kim , L.R. Dawson , S. Krishna . nBn detectors based on InAs/GaSb type-II strain layer superlattices. J. Vac. Sci. Technol. , 3
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