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Performance of GaN Schottky contact MITATT diode at terahertz frequency

Performance of GaN Schottky contact MITATT diode at terahertz frequency

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© The Institution of Engineering and Technology
Published

A novel wurtzite gallium nitride mixed tunnelling and avalanche transit time (MITATT) diode is demonstrated. Schottky contact is used in these MITATT diodes to reduce the contact resistance. The performance of such MITATT diodes is evaluated using an accurate large-signal model. Results indicate that the new type MITATT diode can operate at 0.88 THz. Output power density is more than 1.11 MW/cm2 from 0.29 to 0.88 THz. Efficiency of about 18% is found at 0.88 THz.

Inspec keywords: IMPATT diodes; III-V semiconductors; Schottky diodes; contact resistance; gallium compounds; Schottky barriers; wide band gap semiconductors; submillimetre wave diodes

Other keywords: contact resistance; large-signal model; Schottky contact MITATT diode; mixed tunnelling and avalanche transit time diode; output power density; GaN

Subjects: Junction and barrier diodes; Solid-state microwave circuits and devices

References

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