High-power long-wavelength room-temperature MOVPE-grown quantum cascade lasers with air-semiconductor waveguide
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- Author(s): Q.J. Wang 1 ; C. Pflügl 1 ; L. Diehl 1 ; F. Capasso 1 ; S. Furuta 2 ; H. Kan 2
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View affiliations
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Affiliations:
1:
School of Engineering and Applied Sciences,
Harvard University
, Cambridge
, USA
2: Central Research Laboratories, Hamamatsu Photonics K.K. , Shizuoka , Japan
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Affiliations:
1:
School of Engineering and Applied Sciences,
Harvard University
, Cambridge
, USA
- Source: Electronics Letters, Volume 44, Issue 8, 10 April 2008, p. 525 – 527, DOI: 10.1049/el:20080543, Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Engineering and Technology
Published 28/07/2012
Abstract
Quantum cascade lasers grown by metal organic vapour phase epitaxy (MOVPE) with high peak output power of 1.3 W at 300 K emitting a wavelength of 9.8 µm are reported. The devices are processed in wide ridge waveguide structures with an air-semiconductor interface to confine the laser optical mode. This design increases the optical overlap factor and reduces waveguide losses.
Inspec keywords: ridge waveguides; quantum cascade lasers; vapour phase epitaxial growth
Other keywords: wide ridge waveguide structures; power 1.3 W; temperature 300 K; optical overlap; waveguide losses reduction; quantum cascade lasers; metal organic vapour phase epitaxy; air-semiconductor waveguide; laser optical mode; wavelength 9.8 micron
Subjects: Waveguides and microwave transmission lines; Thin film growth and epitaxy; Semiconductor lasers
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