RT Journal Article
A1 G. Vecchi
A1 F. Raineri
A1 I. Sagnes
A1 K.-H. Lee
A1 S. Guilet
A1 L. Le Gratiet
A1 F. Van Laere
A1 G. Roelkens
A1 D. Van Thourhout
A1 R. Baets
A1 A. Levenson
A1 R. Raj

PB iet
T1 Photonic-crystal surface-emitting laser near 1.55 µm on gold-coated silicon wafer
JN Electronics Letters
VO 43
IS 6
SP 343
OP 345
AB An InP/InGaAs-based photonic band-edge laser bonded on silicon operating near 1.55 µm is presented. A gold reflector positioned below the slab containing the active layer reduces the optical losses of the Bloch-mode resonator. As a result, a quality factor exceeding 8000 is obtained at transparency leading to a laser threshold as low as 3.4 µJ/cm2.
K1 photonic-crystal surface-emitting laser
K1 gold-coated silicon wafer
K1 quality factor
K1 Bloch-mode resonator
K1 InP-InGaAs
K1 optical losses reduction
K1 1.55 micron
K1 Si-Au
K1 photonic band-edge laser
K1 gold reflector
DO https://doi.org/10.1049/el:20073816
UL https://digital-library.theiet.org/;jsessionid=2oo7bgeghl5dl.x-iet-live-01content/journals/10.1049/el_20073816
LA English
SN 0013-5194
YR 2007
OL EN