%0 Electronic Article %A G. Vecchi %A F. Raineri %A I. Sagnes %A K.-H. Lee %A S. Guilet %A L. Le Gratiet %A F. Van Laere %A G. Roelkens %A D. Van Thourhout %A R. Baets %A A. Levenson %A R. Raj %K photonic-crystal surface-emitting laser %K gold-coated silicon wafer %K quality factor %K Bloch-mode resonator %K InP-InGaAs %K optical losses reduction %K 1.55 micron %K Si-Au %K photonic band-edge laser %K gold reflector %X An InP/InGaAs-based photonic band-edge laser bonded on silicon operating near 1.55 µm is presented. A gold reflector positioned below the slab containing the active layer reduces the optical losses of the Bloch-mode resonator. As a result, a quality factor exceeding 8000 is obtained at transparency leading to a laser threshold as low as 3.4 µJ/cm2. %@ 0013-5194 %T Photonic-crystal surface-emitting laser near 1.55 µm on gold-coated silicon wafer %B Electronics Letters %D March 2007 %V 43 %N 6 %P 343-345 %I Institution of Engineering and Technology %U https://digital-library.theiet.org/;jsessionid=1ok64n4h6saha.x-iet-live-01content/journals/10.1049/el_20073816 %G EN