Photonic-crystal surface-emitting laser near 1.55 µm on gold-coated silicon wafer
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- Author(s): G. Vecchi 1 ; F. Raineri 1 ; I. Sagnes 1 ; K.-H. Lee 1 ; S. Guilet 1 ; L. Le Gratiet 1 ; F. Van Laere 2 ; G. Roelkens 2 ; D. Van Thourhout 2 ; R. Baets 2 ; A. Levenson 1 ; R. Raj 1
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View affiliations
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Affiliations:
1:
Laboratoire de Photonique et de Nanostructures (CNRS UPR20)
, Route de Nozay
, France
2: Department of Information Technology, Ghent University–IMEC , Ghent , Belgium
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Affiliations:
1:
Laboratoire de Photonique et de Nanostructures (CNRS UPR20)
, Route de Nozay
, France
- Source: Electronics Letters, Volume 43, Issue 6, 15 March 2007, p. 343 – 345, DOI: 10.1049/el:20073816, Print ISSN 0013-5194, Online ISSN 1350-911X
Abstract
An InP/InGaAs-based photonic band-edge laser bonded on silicon operating near 1.55 µm is presented. A gold reflector positioned below the slab containing the active layer reduces the optical losses of the Bloch-mode resonator. As a result, a quality factor exceeding 8000 is obtained at transparency leading to a laser threshold as low as 3.4 µJ/cm2.
Inspec keywords: laser cavity resonators; silicon; gallium arsenide; III-V semiconductors; surface emitting lasers; gold; photonic crystals; optical losses; indium compounds
Other keywords: photonic-crystal surface-emitting laser; gold-coated silicon wafer; quality factor; Bloch-mode resonator; InP-InGaAs; optical losses reduction; 1.55 micron; photonic band-edge laser; Si-Au; gold reflector
Subjects: Lasing action in semiconductors; Semiconductor lasers; Laser resonators and cavities; Laser resonators and cavities
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