InGaAs/GaAs QD-based electro-optic modulator with over 100 nm bandwidth at 1.55 µm
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- Author(s): G. Moreau 1 ; A. Martinez 1 ; D.-Y. Cong 1 ; K. Merghem 1 ; A. Miard 1 ; A. Lemaitre 1 ; P. Voisin 1 ; A. Ramdane 1
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Affiliations:
1:
Laboratory for Photonics and Nanostructures,
Centre National pour la Recherche Scientifique
, Marcoussis
, France
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Affiliations:
1:
Laboratory for Photonics and Nanostructures,
Centre National pour la Recherche Scientifique
, Marcoussis
, France
- Source: Electronics Letters, Volume 43, Issue 2, 18 January 2007, p. 124 – 125, DOI: 10.1049/el:20073515, Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Engineering and Technology
Published 28/07/2012
Abstract
The potential of an InGaAs/GaAs quantum-dot-based phase modulator for broadband (>100 nm) applications at 1.55 µm is demonstrated. A ∼35% enhancement of the phase variation (Vπ ∼ 3.5 V for 4 mm-long devices) is achieved compared to that obtained with bulk GaAs waveguides.
Inspec keywords: phase modulation; indium compounds; semiconductor quantum dots; electro-optical modulation; III-V semiconductors; gallium arsenide
Other keywords: 1.55 micron; electrooptic modulator; semiconductor quantum dots; phase modulator; InGaAs-GaAs; phase variation enhancement; 4 mm
Subjects: Semiconductor superlattices, quantum wells and related structures; Optical beam modulators; Electro-optical devices
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