High efficiency integral III-N/II-VI blue-green laser converter
High efficiency integral III-N/II-VI blue-green laser converter
- Author(s): S.V. Sorokin ; I.V. Sedova ; A.A. Toropov ; G.P. Yablonskii ; E.V. Lutsenko ; A.G. Voinilovich ; A.V. Danilchyk ; Y. Dikme ; H. Kalisch ; B. Schineller ; M. Heuken ; S.V. Ivanov
- DOI: 10.1049/el:20072623
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Thank you
Your recommendation has been sent to your librarian.
- Author(s): S.V. Sorokin 1 ; I.V. Sedova 1 ; A.A. Toropov 1 ; G.P. Yablonskii 2 ; E.V. Lutsenko 2 ; A.G. Voinilovich 2 ; A.V. Danilchyk 2 ; Y. Dikme 3 ; H. Kalisch 3 ; B. Schineller 4 ; M. Heuken 4 ; S.V. Ivanov 1
-
-
View affiliations
-
Affiliations:
1: Quantum-Size Heterostructures Lab., A.F. Ioffe Physico-Technical Institute of RAS, St.-Petersburg, Russia
2: Quantum-Size Heterostructures Lab., Stepanov Institute of Physics of NAS Belarus, Minsk, Belarus
3: Quantum-Size Heterostructures Lab., Institut für Theoretische Elektrotechnik, Aachen, Germany
4: Quantum-Size Heterostructures Lab., AIXTRON AG, Aachen, Germany
-
Affiliations:
1: Quantum-Size Heterostructures Lab., A.F. Ioffe Physico-Technical Institute of RAS, St.-Petersburg, Russia
- Source:
Volume 43, Issue 3,
1 February 2007,
p.
162 – 163
DOI: 10.1049/el:20072623 , Print ISSN 0013-5194, Online ISSN 1350-911X
An integral optically-pumped laser converter comprising an ultra-low-threshold green (∼540 nm) CdSe quantum dot laser chip pumped by a blue InGaN/GaN quantum well heterostructure laser grown on Si (111) substrates has been fabricated and studied. The maximum achieved quantum efficiency and pulse output power in green are as high as 14% and 3 W, respectively.
Inspec keywords: III-V semiconductors; semiconductor quantum dots; II-VI semiconductors; elemental semiconductors; wide band gap semiconductors; cadmium compounds; optical pumping; gallium compounds; indium compounds; semiconductor growth; quantum well lasers; silicon
Other keywords:
Subjects: Lasing action in semiconductors; Semiconductor lasers
References
-
-
1)
- S.V. Ivanov , A.A. Toropov , S.V. Sorokin , T.V. Shubina , A.V. Lebedev , P.S. Kop'ev , Zh.I. Alferov , H.-J. Lugauer , G. Reuscher , M. Keim , F. Fischer , A. Waag , G. Landwehr . ZnSe-based blue-green laser with a short-period superlattice waveguide. Appl. Phys. Lett. , 15 , 2104 - 2106
-
2)
- E. Kato , H. Noguchi , M. Nagai , H. Okuyama , S. Kijima , A. Ishibashi . Significant progress in II-VI blue-green laser diode lifetime. Electron. Lett. , 3 , 282 - 284
-
3)
- Yablonskii, G.P., Lutsenko, E.V., Kalisch, H., Heuken, M.: `Optically pumped InGaN/GaN and ZnMgSSe/ZnCdSe quantum well heterostructure lasers', Book of Abstracts and Program: 2nd Int. Conf. on Physics of Laser Crystals, Yalta, September 2005,, Ukraine, p. IL8.
-
4)
- S. Gundel , D. Albert , J. Nürnberger , W. Faschunger . Stability of nitrogen in ZnSe and its role in the degradation of ZnSe lasers. Phys. Rev. B , 24 , R16271 - R16274
-
5)
- S.V. Ivanov . Novel materials and designs for long-living II-VI blue-green lasers. Phys. Status Solid A , 1 , 157 - 165
-
6)
- I.V. Sedova , S.V. Sorokin , A.A. Toropov , V.A. Kaygorodov , S.V. Ivanov , S.V. Kop'ev , E.V. Lutsenko , V.N. Pavlovskii , V.Z. Zubelevich , A.L. Gurskii , G.P. Yablonskii , Y. Dikme , H. Kalisch , A. Szymakowski , A. Jansen , B. Schineller , M. Heuken . Lasing in Cd(Zn)Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers. Semiconductors , 9 , 1099 - 1104
-
7)
- S.V. Ivanov , I.V. Sedova , S.V. Sorokin , A.A. Sitnikova , A.A. Toropov , P.S. Kop'ev , E.V. Lutsenko , A.V. Danilchyk , A.G. Voinilovich , V.Z. Zubialevich , A.L. Gurskii , G.P. Yablonskii . High-efficiency low-threshold optically-pumped green laser with single CdSe quantum-disksheet active region. Phys. Status Solid C , 4 , 1229 - 1232
-
1)
Related content
