High power single-longitudinal-mode OP-VECSEL at 1.55 µm with hybrid metal-metamorphic Bragg mirror
High power single-longitudinal-mode OP-VECSEL at 1.55 µm with hybrid metal-metamorphic Bragg mirror
- Author(s): J.P. Tourrenc ; S. Bouchoule ; A. Khadour ; J. Decobert ; A. Miard ; J.C. Harmand ; J.L. Oudar
- DOI: 10.1049/el:20071191
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Thank you
Your recommendation has been sent to your librarian.
- Author(s): J.P. Tourrenc 1 ; S. Bouchoule 1 ; A. Khadour 1 ; J. Decobert 2 ; A. Miard 1 ; J.C. Harmand 1 ; J.L. Oudar 1
-
-
View affiliations
-
Affiliations:
1: Laboratoire de Photonique et Nanostructures, LPN-CNRS, Marcoussis, France
2: Laboratoire de Photonique et Nanostructures, Alcatel III-V Lab, Marcoussis, France
-
Affiliations:
1: Laboratoire de Photonique et Nanostructures, LPN-CNRS, Marcoussis, France
- Source:
Volume 43, Issue 14,
5 July 2007,
p.
754 – 755
DOI: 10.1049/el:20071191 , Print ISSN 0013-5194, Online ISSN 1350-911X
A report is presented on an optically-pumped vertical-external-cavity surface‐emitting laser at 1.55 µm with an hybrid metal-metamorphic Bragg mirror on a SiC substrate. Output power up to 80 mW at room temperature is achieved, and 77 mW in single-longitudinal-mode operation.
Inspec keywords: distributed Bragg reflectors; silicon compounds; laser mirrors; optical pumping; surface emitting lasers
Other keywords:
Subjects: Semiconductor lasers; Optical lenses and mirrors; Design of specific laser systems; Integrated optics; Laser accessories and instrumentation; Lasing action in semiconductors
References
-
-
1)
- C. Symonds , I. Sagnes , J.-L. Oudar , S. Bouchoule , A. Garnache , J. Berggren , M. Strassner . Room temperature CW lasing operation of monolithically grown 1.55 µm vertical external cavity surface emitting laser. Opt. Commun. , 419 - 423
-
2)
- A. Garnache , S. Hoogland , A.C. Tropper , I. Sagnes , G. Saint-Girons , J.S. Roberts . Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power. Appl. Phys. Lett. , 3892 - 3894
-
3)
- Z.L. Liau . Semiconductor wafer bonding via liquid capillarity. Appl. Phys. Lett. , 651 - 653
-
4)
- H. Lindberg , M. Strassner , E. Gerster , A. Larsson . 0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm. Electron. Lett. , 601 - 602
-
5)
- M. Kuznetsov , F. Hakimi , R. Sprague , A. Mooradian . High power (>0.5 W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams. IEEE Photonics Technol. Lett. , 1063 - 1065
-
6)
- R. Haring , R. Paschotta , A. Aschwanden , E. Gini , F. Morier-Genoud , U. Keller . High-power passively mode-locked semiconductor lasers. IEEE J. Quantum Electron. , 1268 - 1275
-
7)
- J. Boucart , C. Starck , A. Plais , N. Bouche , E. Derouin , J.C. Remy , J. Bonnet-Gamard , L. Goldstein , C. Fortin , D. Carpentier , P. Salet , F. Brillouet , J. Jacquet . Metamorphic DBR and tunnel-junction injection: a CW RT monolithic long-wavelength VCSEL. IEEE J. Sel. Top. Quantum Electron. , 520 - 529
-
8)
- H. Lindberg , A. Larsson , M. Strassner . Single-frequency operation of a high-power long-wavelength semiconductor disk laser. Opt. Lett , 2260 - 2262
-
9)
- C. Symonds , J. Dion , I. Sagnes , M. Daines , M. Strassner , L. Leroy , J.-L. Oudar . High performance 1.55 µm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror. Electron. Lett. , 734 - 735
-
10)
- M. Kurdi , S. Bouchoule , A. Bousseksou , I. Sagnes , A. Plais , M. Strassner , C. Symonds , A. Garnache , J. Jacquet . Room-temperature continuous-wave laser operation of electrically-pumped 1.55 µm VECSEL. Electron. Lett. , 11 , 671 - 672
-
1)
Related content
