Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Highly linear BiCMOS optical receiver with voltage-controlled sensitivity

Highly linear BiCMOS optical receiver with voltage-controlled sensitivity

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

  • Author(s): N. Tadić 1  and  H. Zimmermann 2
    • View affiliations
    • Affiliations: 1: Department of Electrical Engineering, University of Montenegro, Podgorica, Serbia and Montenegro
      2: Department of Electrical Engineering, Faculty of Electrical Engineering and Information Technology, Institute of Electrical Measurements and Circuit Design, Vienna University of Technology, Vienna, Austria
  • Source: Volume 42, Issue 2, 19 January 2006, p. 116 – 117
    DOI:  10.1049/el:20063721 , Print ISSN 0013-5194, Online ISSN 1350-911X
© IEE
Published

An optical receiver with voltage-controlled resistor based variable sensitivity in 0.6 µm BiCMOS technology is presented. The bandwidth is independent of the photodiode capacitance. A linearity error smaller than 2.86%, a sensitivity dynamic range of 56 (35 dB), an offset voltage smaller than 0.51 mV, a bandwidth up to 204 MHz, and a power consumption less than 5.7 mW are achieved.

Inspec keywords: BiCMOS integrated circuits; optical receivers; integrated optoelectronics

Other keywords: photodiode capacitance; voltage-controlled sensitivity; voltage-controlled resistor; 0.6 micron; BiCMOS optical receiver

Subjects: Optical communication equipment; Integrated optoelectronics; Mixed technology integrated circuits

References

    1. 1)
      • Seidl, C.: `A programmable OEIC for laser applications in the range from 405 nm to 780 nm', Proc. ESSCIRC 2005, p. 439–442.
    2. 2)
      • A.S. Sedra , G. Roberts , C. Toumazou , F.J. Lidgey , D.G. Haigh . (1990) Current conveyor theory and practice, Analogue IC design: the current-mode approach.
    3. 3)
      • Förtsch, M.: `Integrated PIN photodiodes in high-performance BiCMOS technology', IEEE Int. Electron Devices Meet., Tech. Dig., 2002, p. 801–804.
    4. 4)
      • K. Kieschnick , H. Zimmermann . High-sensitivity BiCMOS OEICfor optical storage systems. IEEE J. Solid-State Circuits , 579 - 584
    5. 5)
      • T. Ruotsalainen , P. Palojarvi , J. Kostamovaara . A current-mode gain-control scheme with constant bandwidth and propagation delay for atransimpedance preamplifier. IEEE J. Solid-State Circuits , 253 - 258
    6. 6)
      • J.H. Huijsing . (2001) Operational amplifiers—theory and design.
    7. 7)
      • B. Wilson . Performance analysis of current conveyors. Electron. Lett. , 1596 - 1598
    8. 8)
      • N. Tadić , D. Gobović . A voltage-controlled resistor in CMOS technology using bisection of the voltage range. IEEE Trans. Instrum. Meas. , 1704 - 1710
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20063721
Loading

Related content

content/journals/10.1049/el_20063721
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address