Guided-wave THz time-domain spectroscopy of highly doped silicon using parallel-plate waveguides
A novel spectroscopy technique that uses parallel-plate waveguides for the characterisation of highly conductive materials in the terahertz (THz) frequency regime is presented. This guided-wave technique resolves some of the fundamental problems associated with standard THz time-domain spectroscopy (THz-TDS) as applied to these optically dense materials. The technique is demonstrated by measuring the conductivity of highly phosphorus doped silicon.
