High speed (>11 GHz) modulation of BCB-passivated 1.55 µm InGaAlAs-InP VCSELs
High speed (>11 GHz) modulation of BCB-passivated 1.55 µm InGaAlAs-InP VCSELs
- Author(s): W. Hofmann ; N.H. Zhu ; M. Ortsiefer ; G. Böhm ; Y. Liu ; M.-C. Amann
- DOI: 10.1049/el:20061733
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- Author(s): W. Hofmann 1 ; N.H. Zhu 2 ; M. Ortsiefer 3 ; G. Böhm 1 ; Y. Liu 2 ; M.-C. Amann 1
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View affiliations
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Affiliations:
1: Walter Schottky Institut, Technische Universität München, Am Coulombwall, Germany
2: Walter Schottky Institut, National Research Center for Optoelectronic Technology, Beijing, People's Republic of China
3: Walter Schottky Institut, VERTILAS Gmbh, Litchenbergstr, Germany
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Affiliations:
1: Walter Schottky Institut, Technische Universität München, Am Coulombwall, Germany
- Source:
Volume 42, Issue 17,
17 August 2006,
p.
976 – 978
DOI: 10.1049/el:20061733 , Print ISSN 0013-5194, Online ISSN 1350-911X
MBE-grown InGaAlAs-InP vertical cavity surface emitting lasers with buried tunnel junction for 1.55 µm wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts, are presented. The devices show superior modulation bandwidths up to 11.6 GHz. Wide open eye diagrams with 6 dB extinction ratio enable error-free data transmission at 10 Gbit/s in back-to-back configuration and over different fibres.
Inspec keywords: III-V semiconductors; semiconductor epitaxial layers; surface emitting lasers; aluminium compounds; optical modulation; passivation; high-speed optical techniques; indium compounds; gallium compounds; semiconductor lasers; molecular beam epitaxial growth
Other keywords:
Subjects: Ultrafast optical techniques; Semiconductor lasers; Laser beam modulation, pulsing and switching; mode locking and tuning; Lasing action in semiconductors; Laser beam modulation, pulsing and switching; mode locking and tuning
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