@ARTICLE{ iet:/content/journals/10.1049/el_20061224, author = {D. Seliuta}, author = {I. Kašalynas}, author = {V. Tamošiūnas}, author = {S. Balakauskas}, author = {Z. Martūnas}, author = {S. Ašmontas}, author = {G. Valušis}, author = {A. Lisauskas}, author = {H.G. Roskos}, author = {K. Köhler}, keywords = {broadband terahertz sensor;bow-tie geometrical form;passive detection scheme;In0.54Ga0.46As;3 micron;wet etching;hemispherical silicon lens-coupled diode;molecular beam epitaxy;10 to 2520 GHz;}, ISSN = {0013-5194}, language = {English}, abstract = {A passive detection scheme for broadband, 10 GHz–2.52 THz, sensing at room temperature is demonstrated using a hemispherical silicon lens-coupled diode of an asymmetrically-shaped bow-tie geometrical form. The device is fabricated from an MBE-grown In0.54Ga0.46As wafer as mesas of 3 µm depth produced by wet etching. The detector exhibits voltage sensitivity about 5 V/W below 1 THz.}, title = {Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature}, journal = {Electronics Letters}, issue = {14}, volume = {42}, year = {2006}, month = {July}, pages = {825-827(2)}, publisher ={Institution of Engineering and Technology}, copyright = {© The Institution of Engineering and Technology}, url = {https://digital-library.theiet.org/;jsessionid=43t0oamf382bb.x-iet-live-01content/journals/10.1049/el_20061224} }