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Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature

Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature

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A passive detection scheme for broadband, 10 GHz–2.52 THz, sensing at room temperature is demonstrated using a hemispherical silicon lens-coupled diode of an asymmetrically-shaped bow-tie geometrical form. The device is fabricated from an MBE-grown In0.54Ga0.46As wafer as mesas of 3 µm depth produced by wet etching. The detector exhibits voltage sensitivity about 5 V/W below 1 THz.

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      • B. Williams . Operation of terahertz quantum-cascade lasers at 164 K in pulsed mode and at 117 K in continuous-wave mode. Opt. Express
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      • A. Taflove , S.C. Hagness . (2000) Computational electrodynamics: the finite-difference time-domain method.

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