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Strain enhanced DC-RF performance of 0.13 µm nMOSFETs on flexible plastic substrate

Strain enhanced DC-RF performance of 0.13 µm nMOSFETs on flexible plastic substrate

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  • Author(s): A. Chin 1 ; H.L. Kao 1 ; C.H. Kao 2 ; C.C. Liao 1 ; Y.Y. Tseng 1 ; C.C. Chi 3
    • View affiliations
    • Affiliations: 1: Department of Electronic Engineering, National Chiao Tung Univeristy, Nano Science Technology Center, University System of Taiwan, Hsinchu, Taiwan, Republic of China
      2: Department of Accounting Information, Takming College, Taiwan, Republic of China
      3: Department of Physics, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
  • Source: Volume 42, Issue 14, 6 July 2006, p. 827 – 829
    DOI:  10.1049/el:20061035 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Engineering and Technology
Published

A 14.3% saturation current Id,sat improvement and 0.75 dB minimum noise figure (NFmin) at 10 GHz were measured by applying ∼0.7% tensile strain for 16 finger, 0.13 µm RF MOSFETs with thin-body (40 µm) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90 nm strained-Si nMOSFETs and consistent with device simulations.

Inspec keywords: substrates; stress effects; plastics; MOSFET; silicon; flexible electronics

Other keywords: saturation current; Si; polyethylene substrates; tensile strain; 0.75 dB; flexible plastic substrate; nMOSFET; 0.13 micron; DC-RF MOSFET; 10 GHz; noise figure; mechanical-strain

Subjects: Insulated gate field effect transistors

References

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      • K.T. Chan . Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process. IEEE MTT-S Int. Microw. Symp. Dig. , 963 - 966
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