Dynamic impact of self-heating on input impedance of bipolar transistors

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Dynamic impact of self-heating on input impedance of bipolar transistors

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The influence of self-heating on the input impedance of bipolar transistors is analytically derived and experimental data presented to validate the analysis. The effect is mainly governed by the collector biasing conditions, and may be advantageously explored up to the thermal response cutoff frequency of the device.

Inspec keywords: bipolar transistors; semiconductor device models

Other keywords: dynamic self-heating impact; forward transconductance; collector biasing conditions; output conductance; bipolar transistor input impedance; thermal response cutoff frequency; input impedance

Subjects: Bipolar transistors; Semiconductor device modelling, equivalent circuits, design and testing

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