Single fundamental mode photonic crystal vertical cavity laser with improved output power

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© IEE
Published 29/07/2012

Abstract

The single fundamental mode output power of photonic crystal vertical cavity lasers is improved by varying sizes of oxide apertures and defect lasing apertures. A maximum output power of 3.1 mW in the fundamental mode has been achieved with a new fabrication process that involves only focused ion beam etching to create holes in selectively oxidised VCSELs.

Inspec keywords: focused ion beam technology; photonic crystals; sputter etching; surface emitting lasers; laser modes; optical fabrication; semiconductor lasers

Other keywords: output power; selectively oxidised VCSELs; 3.1 mW; focused ion beam etching; oxide apertures; fabrication process; fundamental mode; defect lasing apertures; single fundamental mode photonic crystal vertical cavity laser; maximum output power

Subjects: Plasma applications in manufacturing and materials processing; Surface treatment and degradation in semiconductor technology; Semiconductor lasers; Photonic bandgap materials; Surface treatment (semiconductor technology); Photonic band gap (condensed matter); Lasing action in semiconductors; Laser resonators and cavities; Optical fabrication, surface grinding; Laser resonators and cavities

References

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      • Furukawa, A.: `High-power single-mode VCSELs with triangular holey structure', CPDB1, CLEO 2004, San Francisco, CA, USA
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      • Shinada, S.: `Single high-order transverse mode 850 nm VCSEL with micromachined surface relief', CLEO 2001, Tech. Dig., Baltimore, MD, USA, p. 106–107
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      • Danner, A.J., Raftery, J.J., Choquette, K.D.: `High single mode power in photonic crystal vertical cavity lasers', CTuP13, CLEO 2004, San Francisco, CA, USA
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