Bend loss attenuator by carrier injection in InGaAsP/InP
Bend loss attenuator by carrier injection in InGaAsP/InP
- Author(s): S. Ng ; S. Abdalla ; P. Barrios ; A. Delâge ; S. Janz ; R. McKinnon ; B. Syrett
- DOI: 10.1049/el:20053357
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- Author(s): S. Ng 1 ; S. Abdalla 1 ; P. Barrios 2 ; A. Delâge 2 ; S. Janz 2 ; R. McKinnon 2 ; B. Syrett 1
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View affiliations
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Affiliations:
1: Department of Electronics, Carleton University, Ottawa, Canada
2: Institute forMicrostructural Sciences, National Research Council Canada, Ottawa, Canada
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Affiliations:
1: Department of Electronics, Carleton University, Ottawa, Canada
- Source:
Volume 41, Issue 24,
24 November 2005,
p.
1348 – 1350
DOI: 10.1049/el:20053357 , Print ISSN 0013-5194, Online ISSN 1350-911X
A compact InGaAsP/InP waveguide bend loss attenuator with electrically modulated bend loss is demonstrated. The carrier injection device exhibits better than 15 dB modulation and <20 ns response time. The bend loss attenuator requires less than half the current of a comparable straight waveguide attenuator to achieve 3 dB attenuation.
Inspec keywords: gallium arsenide; indium compounds; optical waveguide components; optical attenuators; charge injection; III-V semiconductors; waveguide attenuators
Other keywords:
Subjects: Optical waveguides and couplers; Optical waveguides
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